A UK-funded research project
We aim to develop advanced fabrication processes for Gallium
Nitride (GaN) and related materials (AlN and InN) for the
21st Century manufacturing industries.
The III-Nitrides are functional materials that underpin the
emerging global solid state lighting and power electronics
industries. But their properties enable far wider
applications: sensing by photonic, electronic and
piezoelectric effects and in non-linear optics. Many
applications of these functions are enhanced, even enabled
by creating three dimensional nanostructures.
Therefore we aim to develop nanostructuring processes on a
manufacturing scale to unlock the potential of these
properties of the III-Nitride semiconductors in a range of
innovative materials and devices.
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Nanofabrication
featuring nanoimprint lithography and displacement Talbot lithography for sub-micron patterning
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Epitaxial growth
via Metal Organic Vapour Phase Epitaxy (MOVPE)
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Advanced characterisation
via high-resolution electron-beam-based characterisation techniques
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Modelling
of nanophotonic devices and design centering
The TEAM
Philip Shields
Tao Wang
Robert Martin
Martin Cryan
Duncan Allsopp
Carol Trager Cowan
Andrei Sarua
Naresh Gunasekar
Research Associate
Jon Pugh
Research Associate
